Laser for extreme UV lithography

Ann Arbor, Mich. – Arbor Photonics Inc. has received SBIR Phase 1B funding from the National Science Foundation (NSF) for its work on "High Power Pulsed Fiber Lasers for EUV Lithography". This supplemental award will support production of 3CTM (chirally-coupled core) optical fiber to achieve 200 W average power, several mJ, nanosecond lasers in the 1030–1090 nm wavelength range with single mode output.

The 3C  fiber concept is a revolutionary type of optical fiber that utilizes an internal structure to produce single spatial mode output from very large core fibers. Current 3C fibers with 35 µm central core diameter have already produced >100 kW peak single-emitter fiber laser modules with exceptional beam quality and narrow linewidth. These features will permit spectral combining of closely spaced laser channels to produce a single beam of nanosecond pulses with an average power of several kilowatts.

The resulting laser system is intended for use in next generation laser produced plasma extreme ultraviolet lithography (LPP EUV). According to the 2009 International Technology Roadmap for Semiconductors, EUV lithography will be needed for patterning high performance semiconductor integrated circuits by 2016.

Arbor Photonics provides high power fiber laser solutions that increase productivity and enable new capabilities for advanced laser materials processing and defense applications. They are developing highly reliable fiber lasers that – because of beam quality and optical power – can enable improvements in throughput and processing speed in microelectronics manufacturing, solar cell processing. and industrial materials processing applications.

For further information, contact: Michelle Stock at mstock@arborphotonics.com

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